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| RF2127 rf power bipolar transistors vhf mobile applications features summary 175 mhz 12.5 volts common emitter pout = 100 w min. with 6.0 db gain description the RF2127 is a 12.5 v class c epitaxial silicon npn planar transistor designed primarily for vhf fm communications. this device utilizes diffused emitter resistors to withstand extremely high vswr under rated operating conditions, and is internally input matched to optimize power gain and efficiency over the 136 - 175 mhz band.
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